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An Ultra-high Photoresponsive & Transparent Graphene Hybrid Phototransistor for Optoelectronic Applications

An Ultra-high Photoresponsive & Transparent Graphene Hybrid Phototransistor for Optoelectronic Applications
Field
Electronics
Patent
IP00628

Key Problem and Market Opportunity

  • Graphene is identified as a promising new material for making next-generation optoelectronic devices because of its flexibility, transparency, high carrier mobility, wavelength selectivity, gapless band structure and electronically tunable capability
  • However, for phototransistor application, graphene phototransistors are suffering from low photoreponsitivity (< 1AW-1)
  • The associating nano-fabrication process for existing graphene phototransistor is also expensive

Key Advantages of the Technology

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  • HKU’s graphene hybrid phototransistor achieves an ultra-high sub-bandgap photoresponsivity of > 70,000AW-1
  • Photoresponsiveness is within the visible range of 300nm to 700nm (13.6% effective EQE at 425nm)
  • Spectral selectivity of the graphene hybrid phtototransistors may be tuned by controlling the thickness of the dielectric layer
  • Photoabsorption properties can also be tuned by chemical modification or dye sensitization
  • HKU’s graphene hybrid phototransistor is highly transparent and flexible
  • Simple and low-cost fabrication process
  Prior Arts HKU Graphene Hybrid Phototransistors
Photoresponsivity ✗ Low (< 1AW-1) ✓ Ultra-high (> 70,000 AW-1)
Fabrication Process ✗ Expensive ✓ Low-Cost
Wavelength Selectivity Tuning ✗ Complex ✓ Simple

Potential Product and Services

  • Interactive Flat Panel Displays with embedded image detection for both touch and touch-free operations
  • Flexible and wearable optoelectronic devices like Image Sensors, Biomedical Sensors and Optical Communication Sensors

Development Status and IP Strength

  • US Patent Application No. 15/614,975
  • Chinese Patent Application No. 201710426252.4
  • Device prototype is available in laboratory scale

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